The position is available immediately for one year, with extension as an option based on productivity and funding. The position will report to Dr Xufeng Kou.
Qualifications:
A PhD in electrical engineering, physics, or materials science. Hands-on, in-depth experience with semiconductor physics, device fabrication and device characterization is required. We are especially seeking candidates with rich experience of MBE growth and/or low-temperature /high-field measurement. Experience and knowledge of III-V high-speed device and spintronic (e.g spin-orbit coupling, spin Hall effect, STT-RAM) will be a huge plus. Hands-on experience with integrated circuit is also highly desirable.
Application:
Qualified applicants are invited to submit (all in English) a resume, research statement (describing research experience and career plan), copies of two representative publications, and two letters of reference to: hr-sist@shanghaitech.edu.cn and copied to Dr. Xufeng Kou (email: kouxf@shanghaitech.edu.cn). We provide very competitive salary and benefits for this post.
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